A Study of Image Contrast, Stochastic Defectivity, and Optical Proximity Effect in EUV Photolithographic Process Under Typical 5 nm Logic Design Rules-Reference-Cited by-同舟云学术

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A Study of Image Contrast, Stochastic Defectivity, and Optical Proximity Effect in EUV Photolithographic Process Under Typical 5 nm Logic Design Rules

Published:2020-06-26 Issue: Volume: Page:
ISSN:
Container-title:2020 China Semiconductor Technology International Conference (CSTIC)
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Author:

Wu Qiang,Li Yanli,Yang Yushu,Chen Shoumian

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9282274/9282383/09282499.pdf?arnumber=9282499

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Possibility of Using 193 NM Immersion Lithography Process For 5 NM Logic Design Rules;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26

2. CMOS compatible 2T pixel for on-wafer in-situ EUV detection;Discover Nano;2023-06-20

3. Considerations in the Setting up of Industry Standards for Photolithography Process, Historical Perspectives, Methodologies, and Outlook;2022 China Semiconductor Technology International Conference (CSTIC);2022-06-20

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