Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs-Reference-Cited by-同舟云学术

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Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs

Published:2005-08-18 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Fifth International Conference on Solid State Lighting
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Author:

Malyutenko V. K.,Malyutenko O. Y.,Zinovchuk A. V.,Zakheim A. L.,Zakheim D. A.,Smirnova I. P.,Gurevich S. A.

Publisher

SPIE

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-resolution mirror temperature mapping in GaN-based diode lasers by thermoreflectance spectroscopy;Japanese Journal of Applied Physics;2017-01-06

2. High-resolution over-sampling reconstruction algorithm for a microscanning thermal microscope imaging system;Infrared Physics & Technology;2016-05

3. Si photonics expands to mid-wave and long-wave infrared: the fundamentals and applications;SPIE Proceedings;2016-03-14

4. Do we need to recalibrate our strategy in InGaN-on-SiC LED technology given its low efficiency?;SPIE Proceedings;2016-03-08

5. Enhanced optical output of InGaN/GaN near-ultraviolet light-emitting diodes by localized surface plasmon of colloidal silver nanoparticles;Nanotechnology;2015-09-03

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