High-resolution mirror temperature mapping in GaN-based diode lasers by thermoreflectance spectroscopy-Reference-Cited by-同舟云学术

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High-resolution mirror temperature mapping in GaN-based diode lasers by thermoreflectance spectroscopy

Published:2017-01-06 Issue:2 Volume:56 Page:020302
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Pierścińska Dorota,Marona Łucja,Pierściński Kamil,Wiśniewski Przemysław,Perlin Piotr,Bugajski Maciej

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=2/a=020302/pdf

Reference30 articles.

1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

2. Physics of high-power InGaN/GaN lasers

3. Thermal Analysis for GaN Laser Diodes

4. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

5. The Blue Laser Diode

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Narrow versus broad waveguide laser diodes: a comparative analysis of self-heating and reliability;High-Power Diode Laser Technology XXII;2024-03-12

2. A review of thermoreflectance techniques for characterizing wide bandgap semiconductors’ thermal properties and devices’ temperatures;Journal of Applied Physics;2022-12-14

3. Spatially resolved self-heating and thermal impedance of laser diodes using CCD-TR imaging;OSA Continuum;2021-04-02

4. Time resolved Fabry-Perot measurements of cavity temperature in pulsed QCLs;Optics Express;2018-03-05

5. Examination of thermal properties and degradation of InGaN - based diode lasers by thermoreflectance spectroscopy and focused ion beam etching;AIP Advances;2017-07

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