Examination of thermal properties and degradation of InGaN - based diode lasers by thermoreflectance spectroscopy and focused ion beam etching
Author:
Affiliation:
1. Institute of Electron Technology, 02-668 Warsaw, Poland
2. Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland
3. TopGaN Ltd., 01-142 Warsaw, Poland
Funder
Narodowe Centrum Nauki (NCN)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4990867
Reference34 articles.
1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
2. Physics of high-power InGaN/GaN lasers
3. Thermal Analysis for GaN Laser Diodes
4. Degradation in AlGaInN lasers
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3. Formation of a-type dislocations near the InGaN/GaN interface during post-growth processing of epitaxial structures;Journal of Applied Physics;2023-01-25
4. A review of thermoreflectance techniques for characterizing wide bandgap semiconductors’ thermal properties and devices’ temperatures;Journal of Applied Physics;2022-12-14
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