Polarized time-resolved photoluminescence measurements ofm-plane AlGaN/GaN MQWs
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SPIE
Reference19 articles.
1. Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates
2. NonpolarInxGa1−xN/GaN(11¯00)multiple quantum wells grown onγ−LiAlO2(100)by plasma-assisted molecular-beam epitaxy
3. Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates
4. Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
5. Growth of () GaN on a 7-degree off-oriented (001)Si substrate by selective MOVPE
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges;physica status solidi (a);2018-12-27
2. Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells;SPIE Proceedings;2016-02-26
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