Comprehensive defect avoidance framework for mitigating EUV mask defects

Author:

Kagalwalla Abde Ali1,Gupta Puneet1

Affiliation:

1. Univ. of California, Los Angeles (United States)

Publisher

SPIE

Reference25 articles.

1. Openaccess API. http://www.si2.org/.

2. Volume of an n-ball. http://en.wikipedia.org/wiki/Volume_of_an_n-ball.

3. International Technology Roadmap for Semiconductors(ITRS). http://www.itrs.net/, 2009.

4. Multidimensional binary search trees used for associative searching

5. Benno Bueler and Andreas Enge. VINCI version 1.0.5. http://www.math.u-bordeaux1.fr/~aenge/software/vinci/manual.pdf.

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1. Comprehensive extreme ultraviolet blank defect avoidance system;International Conference on Extreme Ultraviolet Lithography 2022;2022-12-01

2. Compensation of EUV lithography mask blank defect based on an advanced genetic algorithm;Optics Express;2021-08-23

3. A method for compensating lithographic influence of EUV mask blank defects by an advanced genetic algorithm;International Conference on Extreme Ultraviolet Lithography 2019;2019-09-26

4. Optimization of defect compensation for extreme ultraviolet lithography mask by covariance-matrix-adaption evolution strategy;Journal of Micro/Nanolithography, MEMS, and MOEMS;2018-12-03

5. Analyzing EUV mask costs;SPIE Proceedings;2016-10-25

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