A method for compensating lithographic influence of EUV mask blank defects by an advanced genetic algorithm-Reference-Cited by-同舟云学术

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A method for compensating lithographic influence of EUV mask blank defects by an advanced genetic algorithm

Published:2019-09-26 Issue: Volume: Page:
ISSN:
Container-title:International Conference on Extreme Ultraviolet Lithography 2019
language:
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Author:

Wu Ruixuan,Dong Lisong,Chen Rui,Ye Tianchun,Wei Yayi

Publisher

SPIE

Reference17 articles.

1. EUV Resolution Enhancement Techniques (RETs) for k1 0.4 and below;Hsu,2015

2. Classification and printability of EUV mask defects from SEM images;Cho,2017

3. Defect Printability Study using EUV Lithography;Holfeld,2006

4. Using pattern shift to avoid blank defects during EUVL mask fabrication;Negishi,2013

5. Comprehensive Defect Avoidance Framework for Mitigating EUV Mask Defects;Kagalwalla,2014

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 计算光刻研究及进展;Laser & Optoelectronics Progress;2022

2. Compensation of EUV lithography mask blank defect based on an advanced genetic algorithm;Optics Express;2021-08-23

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