High speed optical metrology solution for after etch process monitoring and control-Reference-Cited by-同舟云学术

High speed optical metrology solution for after etch process monitoring and control

Published:2014-04-02 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Metrology, Inspection, and Process Control for Microlithography XXVIII
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Author:

Charley Anne-Laure,Leray Philippe,Pypen Wouter,Cheng Shaunee,Verma Alok,Mattheus Christine,Wisse Baukje,Cramer Hugo,Niesing Henk,Kruijswijk Stefan

Publisher

SPIE

Reference3 articles.

1. Integrated scatterometry for tight overlay and CD control to enable 20-nm node wafer manufacturing, J. Benschop; A. Engelen; H. Cramer; M. Kubis; P. Hinnen; H. van der Laan; K. Bhattacharyya, J. Mulkens, Proc. SPIE 8683, Optical Microlithography XXVI, 86830P (April 12, 2013).

2. Combined overlay, focus and CD metrology for leading edge lithography;Ebert,2011

3. 22nm half-pitch patterning by CVD spacer self-alignment double patterning (SADP);Bencher,2008

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1. Development of standard samples with programmed defects for evaluation of pattern inspection tools for 7-nm and smaller nodes;Journal of Micro/Nanolithography, MEMS, and MOEMS;2019-09-13

2. Standard wafer with programed defects to evaluate the pattern inspection tools for 300-mm wafer fabrication for 7-nm node and beyond;Journal of Micro/Nanolithography, MEMS, and MOEMS;2019-06-19

3. Development of standard samples with programmed defects for evaluation of pattern inspection tools;Metrology, Inspection, and Process Control for Microlithography XXXIII;2019-03-26

4. High-NA optical CD metrology on small ln-cell targets, enabling improved higher order dose control and process control for logic;SPIE Proceedings;2017-03-28

5. Intra-field patterning control using high-speed and small-target optical metrology of CD and focus;SPIE Proceedings;2015-03-19