Reticle enhancement techniques toward iN7 metal2-Reference-Cited by-同舟云学术

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Reticle enhancement techniques toward iN7 metal2

Published:2017-03-24 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Gillijns W.¹,Tan L. E.¹,Drissi Y.¹,Blanco V.¹,Trivkovic D.¹,Kim R. H.¹,Gallagher E.¹,McIntyre G.¹

Affiliation:

1. IMEC (Belgium)

Publisher

SPIE

Reference10 articles.

1. Design and pitch scaling for affordable node transition and EUV insertion scenario;Kim,2017

2. Single exposure EUV patterning of BEOL metal layers on the Imec iN7 platform;Carballo V.,2017

3. SAQP & EUV block patterning of BEOL metal layers on imec’s iN7 platform;Bekaert,2017

4. Low track height standard cell design in iN7 using scaling boosters;Sherazi,2017

5. Imaging impact of multilayer tuning in EUV masks, experimental validation;Philipsen,2014

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1. Fast EUV Lithography Source Optimization Using Cascade Compressed Sensing;IEEE Transactions on Nanotechnology;2021

2. Improving exposure latitudes and aligning best focus through pitch by curing M3D phase effects with controlled aberrations;International Conference on Extreme Ultraviolet Lithography 2019;2019-09-26

3. Learning-based compressive sensing method for EUV lithographic source optimization;Optics Express;2019-07-24

4. Co-optimization method to reduce the pattern distortion caused by polarization aberration in anamorphic EUV lithography;Applied Optics;2019-05-06

5. Reducing extreme ultraviolet mask three-dimensional effects by alternative metal absorbers;Journal of Micro/Nanolithography, MEMS, and MOEMS;2017-08-01

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