Reducing extreme ultraviolet mask three-dimensional effects by alternative metal absorbers-Reference-Cited by-同舟云学术

Reducing extreme ultraviolet mask three-dimensional effects by alternative metal absorbers

Published:2017-08-01 Issue:4 Volume:16 Page:041002
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Philipsen Vicky¹,Luong Kim Vu²,Souriau Laurent¹,Erdmann Andreas³,Xu Dongbo³,Evanschitzky Peter³,van de Kruijs Robbert W. E.⁴,Edrisi Arash⁴,Scholze Frank⁵,Laubis Christian⁵,Irmscher Mathias⁶,Naasz Sandra⁶,Reuter Christian⁶,Hendrickx Eric¹

Affiliation:

1. IMEC, Advanced Patterning Department, Leuven, Belgium

2. IMEC, Advanced Patterning Department, Leuven, BelgiumbKULeuven, Department of Materials Engineering, Leuven, Belgium

3. Fraunhofer IISB, Computational Lithography and Optics, Erlangen, Germany

4. University of Twente, Industrial Focus Group XUV Optics, Enschede, The Netherlands

5. PTB, EUV Radiometrie, Berlin, Germany

6. IMS CHIPS, Nanopatterning Business Unit, Stuttgart, Germany

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Single exposure EUV patterning of BEOL metal layers on the IMEC iN7 platform

2. SAQP and EUV block patterning of BEOL metal layers on IMEC's iN7 platform

3. Imaging impact of multilayer tuning in EUV masks, experimental validation

4. Alternative EUV mask technology to compensate for mask 3D effects

5. NXE/3300 insertion for N7: status and challenges;Philipsen,2015

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