Water developable non-chemically amplified photoresist for electron beam and extreme ultraviolet lithography
Author:
Affiliation:
1. Chinese Academy of Sciences, Technical Institute of Physics and Chemistry, Key Laboratory of Photoch
2. University of Chinese Academy of Sciences, Beijing
3. Paul Scherrer Institute, Laboratory for Micro- and Nanotechnology, Villigen PSI
Funder
National Natural Science Foundation of China
Publisher
SPIE-Intl Soc Optical Eng
Subject
General Arts and Humanities
Reference28 articles.
1. Critical challenges for EUV resist materials
2. Materials challenges for sub-20-nm lithography
3. Aqueous developable dual switching photoresists for nanolithography
4. Chain scission resists for extreme ultraviolet lithography based on high performance polysulfone-containing polymers
5. CO 2 ‐Based Dual‐Tone Resists for Electron Beam Lithography
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2. Nonchemically amplified molecular resist based on multi-sulfonium modified triptycene for electron beam and extreme ultraviolet lithography;Journal of Micro/Nanopatterning, Materials, and Metrology;2024-07-11
3. Increasing the Sensitivity of Nonchemically Amplified Resists by Oxime Sulfonate-Functionalized Polystyrene;ACS Applied Polymer Materials;2024-04-18
4. Nonchemically Amplified Molecular Resists Based on Sulfonium-Functionalized Sulfone Derivatives for Sub-13 nm Nanolithography;ACS Applied Nano Materials;2023-09-19
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