Impact of pixel-dose optimization on pattern fidelity for helium ion beam lithography on EUV resist-Reference-Cited by-同舟云学术

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Impact of pixel-dose optimization on pattern fidelity for helium ion beam lithography on EUV resist

Published:2015-03-20 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Advances in Patterning Materials and Processes XXXII
language:
Short-container-title:

Author:

Kalhor Nima,Mulckhuyse Wouter,Alkemade Paul,Maas Diederik

Publisher

SPIE

Reference15 articles.

1. Sub-10-nm nanolithography with a scanning helium beam

2. A low magnification focused ion beam system with 8 nm spot size

3. Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist

4. Focused ion beam lithography

5. Focused ion beam lithography

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical metrology on latent resist images;Micro and Nano Engineering;2023-06

2. Energy and Transport Lengths for Describing Volume of Resist Modification in Ion-Beam Lithography;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2022-08

3. Investigation on helium ion beam lithography with proximity effect correction;Journal of Micro/Nanopatterning, Materials, and Metrology;2021-07-29

4. A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope;Beilstein Journal of Nanotechnology;2021-07-02

5. The patterning toolbox FIB-o-mat: Exploiting the full potential of focused helium ions for nanofabrication;Beilstein Journal of Nanotechnology;2021-04-06

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