Improved radiation detectors on 4H-SiC epilayers by edge termination
Author:
Affiliation:
1. Univ. of South Carolina (United States)
Publisher
SPIE
Reference14 articles.
1. Silicon carbide and its use as a radiation detector material
2. Low Energy X-Ray and $\gamma$-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer
3. Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy
4. Deep Levels in n-Type 4H-Silicon Carbide Epitaxial Layers Investigated by Deep-Level Transient Spectroscopy and Isochronal Annealing Studies
5. Hole injection and dielectric breakdown in 6H–SiC and 4H–SiC metal–oxide–semiconductor structures during substrate electron injection via Fowler–Nordheim tunneling
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