Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3675513
Reference25 articles.
1. Current SiC technology for power electronic devices beyond Si
2. High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
3. Very High Growth Rate Epitaxy Processes with Chlorine Addition
4. New Achievements on CVD Based Methods for SiC Epitaxial Growth
5. Vanadium doping using VCl4 source during the chloro-carbon epitaxial growth of 4H-SiC
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4. Role of deep levels and barrier height lowering in current-flow mechanism in 150 μm thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors;Applied Physics Letters;2021-08-09
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