Hole injection and dielectric breakdown in 6H–SiC and 4H–SiC metal–oxide–semiconductor structures during substrate electron injection via Fowler–Nordheim tunneling

Author:

Samanta Piyas,Mandal Krishna C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

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2. Characterization of 4H–SiC epitaxial layers and high resistivity bulk crystals for radiation detectors;Mandal;IEEE Trans Nucl Sci,2012

3. Band offsets and electronic structure of SiC/SiO2 interface;Afanasev;J Appl Phys,1996

4. Properties of advanced semiconductor materials: GaN, AlN, InN, BN, SiC, and SiGe;Levinshtein,2001

5. Temperature dependence of FN current in 6H- and 4H–SiC MOS capacitors;Agarwal;IEEE Electron Device Lett,1997

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