Advanced in-line optical metrology of sub-10nm structures for gate all around devices (GAA)-Reference-Cited by-同舟云学术

Advanced in-line optical metrology of sub-10nm structures for gate all around devices (GAA)

Published:2016-03-29 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Muthinti Raja¹,Loubet Nicolas¹,Chao Robin¹,Ott John¹,Guillorn Michael¹,Felix Nelson¹,Gaudiello John¹,Lund Parker²,Cepler Aron²,Sendelbach Matthew²,Cohen Oded³,Wolfling Shay³,Bozdog Cornel⁴,Klare Mark⁴

Affiliation:

1. IBM Research (United States)

2. Nova Measuring Instruments, Inc. (United States)

3. Nova Measuring Instruments, LTD (Israel)

4. ReVera (United States)

Publisher

SPIE

Reference3 articles.

1. I. Lauer et al., “Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance,” VLSI Technology (VLSI Technology), 2015 Symposium on, Kyoto, 2015, pp. T140-T141; doi: 10.1109/VLSIT.2015.7223653

2. Benoit L'Herron, Robin Chao, Kwanghoon Kim, Wei Ti Lee, Koichi Motoyama, et al., “Hybridization of XRF/XPS and scatterometry for Cu CMP process control”, Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 94241M (March 19, 2015); doi:10.1117/12.2086155.

3. Benoit L'Herron, Nicolas Loubet, Qing Liu, et. al., “Silicon-Germanium (SiGe) Composition and Thickness Determination via Simultaneous Small-spot XPS and XRF Measurements”, Proc. Advanced Semiconductor Manufacturing Conference (ASMC), Saratoga Springs, New York, May 19-21, 2014.

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