Model-based MPC enables curvilinear ILT using either VSB or multi-beam mask writers-Reference-Cited by-同舟云学术

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Model-based MPC enables curvilinear ILT using either VSB or multi-beam mask writers

Published:2017-07-13 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Pang Linyong¹,Takatsukasa Yutetsu¹,Hara Daisuke¹,Pomerantsev Michael¹,Su Bo¹,Fujimura Aki¹

Affiliation:

1. D2S, Inc. (United States)

Publisher

SPIE

Reference15 articles.

1. Fast inverse lithography technology;Abrams,2006

2. Inverse Lithography Technology (ILT), What is the Impact to Photomask Industry?;Pang,2006

3. Considering MEEF in inverse lithography technology (ILT) and source mask optimization (SMO);Pang,2008

4. Inverse Lithography Technology (ILT): Keep the balance between SRAF and MRC at 45and 32 - nm;Pang,2007

5. Validation of Inverse Lithography Technology (ILT) and Its Adaptive SRAF at Advanced Technology Nodes;Pang,2008

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Make the impossible possible: use variable-shaped beam mask writers and curvilinear full-chip inverse lithography technology for 193i contacts/vias with mask-wafer co-optimization;Journal of Micro/Nanopatterning, Materials, and Metrology;2024-02-06

2. Assessment of contour modeling readiness for curvilinear masks;Photomask Technology 2022;2022-12-01

3. Inverse lithography technology: 30 years from concept to practical, full-chip reality;Journal of Micro/Nanopatterning, Materials, and Metrology;2021-08-31

4. Source mask optimization for extreme-ultraviolet lithography based on thick mask model and social learning particle swarm optimization algorithm;Optics Express;2021-02-04

5. Enabling faster VSB writing of 193i curvilinear ILT masks that improve wafer process windows for advanced memory applications;Photomask Technology 2020;2020-10-07

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