Strong carrier localization in stacking faults in semipolar (11-22) GaN
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SPIE
Reference23 articles.
1. Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (11¯01) GaN revealed from spatially resolved luminescence
2. Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
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Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges;physica status solidi (a);2018-12-27
2. Improvement of optical quality of semipolar (112¯2) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth;Journal of Applied Physics;2016-04-14
3. Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN;SPIE Proceedings;2016-02-26
4. Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells;SPIE Proceedings;2016-02-26
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