On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4768686
Reference39 articles.
1. Nonpolar and Semipolar Group III Nitride-Based Materials
2. High-quality nonpolar 4H-AlN grown on 4H-SiC (112¯0) substrate by molecular-beam epitaxy
3. 4H-polytype AlN grown on 4H-SiC(112̄0) substrate by polytype replication
4. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
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