Improvement of optical quality of semipolar (112¯2) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth-Reference-Cited by-同舟云学术

Improvement of optical quality of semipolar (112¯2) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth

Published:2016-04-14 Issue:14 Volume:119 Page:145303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Monavarian Morteza¹,Izyumskaya Natalia¹,Müller Marcus²,Metzner Sebastian²,Veit Peter²,Can Nuri¹³,Das Saikat¹,Özgür Ümit¹,Bertram Frank²,Christen Jürgen²,Morkoç Hadis¹,Avrutin Vitaliy¹

Affiliation:

1. Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA

2. Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, D-39106 Magdeburg, Germany

3. Department of Physics, Balikesir University, Balikesir 10145, Turkey

Funder

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/jap/119/14/1.4945770.pdf?itemId=/content/aip/journal/jap/119/14/10.1063/1.4945770&mimeType=pdf&containerItemId=content/aip/journal/jap

Reference38 articles.

1. Effects of macroscopic polarization in III-V nitride multiple quantum wells

2. Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure

3. Giant electric fields in unstrained GaN single quantum wells

4. Extremely sharp dependence of the exciton oscillator strength on quantum-well width in theGaN/AlxGa1−xNsystem: The polarization field effect

5. Study of the epitaxial relationships between III-nitrides and M-plane sapphire

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3. Impact of 3D growth and SiN x interlayer on the quality of (11–22) semi-polar GaN grown on m-plane sapphire;Applied Physics Express;2019-10-07

4. Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11–22) GaN Template;Crystal Growth & Design;2019-09-12

5. Epitaxial GaN films with ultralow threading dislocation densities grown on an SiO2-masked patterned sapphire substrate;Applied Physics Express;2019-09-05