Modeling of block copolymer dry etching for directed self-assembly lithography-Reference-Cited by-同舟云学术

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Modeling of block copolymer dry etching for directed self-assembly lithography

Published:2018-03-20 Issue: Volume: Page:
ISSN:
Container-title:Advanced Etch Technology for Nanopatterning VII
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Author:

Belete Zelalem Tamrate,Baer Eberhard,Erdmann Andreas

Publisher

SPIE

Reference33 articles.

1. 28 nm pitch of line/space pattern transfer into silicon substrates with chemo-epitaxy Directed Self-Assembly (DSA) process flow

2. PMMA removal selectivity to polystyrene using dry etch approach;Sarrazin,2016

3. Directed self-assembly of block copolymers for next generation nanolithography

4. Highly selective etch gas chemistry design for precise DSAL dry development process;Omura,2014

5. Pattern density multiplication by direct self assembly of block copolymers: toward 300mm CMOS requirements;Tiron,2012

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Developing Anisotropy in Self‐Assembled Block Copolymers: Methods, Properties, and Applications;Macromolecular Rapid Communications;2021-07-17

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