Numerical simulation of deep-UV avalanche photodetectors
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SPIE
Reference32 articles.
1. GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition
2. GaN avalanche photodiodes operating in linear-gain mode and Geiger mode
3. Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes
4. Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes
5. GaN avalanche photodiodes
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1. Mean multiplication gain and excess noise factor of GaN and Al0.45Ga0.55N avalanche photodiodes;The European Physical Journal Applied Physics;2020-10
2. High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates;Applied Physics Letters;2020-02-24
3. A Calculation Method for Response Spectrum of Mercury Cadmium Telluride Infrared Focal Plane Arrays Detector;Journal of Electronic Materials;2019-11-27
4. Simulation of infrared avalanche photodiodes from first principles;Infrared Technology and Applications XLIII;2017-02-22
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