Enhanced diffusion of antimony within a heavily phosphorus‐doped layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336678
Reference10 articles.
1. Silicon self‐interstitial supersaturation during phosphorus diffusion
2. Supersaturation of self‐interstitials and undersaturation of vacancies during phosphorus diffusion in silicon
3. Retardation of Sb Diffusion in Si during Thermal Oxidation
4. Oxidation‐enhanced or retarded diffusion and the growth or shrinkage of oxidation‐induced stacking faults in silicon
5. Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kinetics
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2. Physical processes associated with the deactivation of dopants in laser annealed silicon;Journal of Applied Physics;2002-07
3. Simulation of Antimony Diffusion in Heavily Arsenic-Doped Silicon;Japanese Journal of Applied Physics;1998-04-15
4. Evidence for vacancy percolation in highly-doped silicon;Hyperfine Interactions;1994-12
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