Physical processes associated with the deactivation of dopants in laser annealed silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1481974
Reference43 articles.
1. Arsenic deactivation enhanced diffusion: A time, temperature, and concentration study
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4. B cluster formation and dissolution in Si: A scenario based on atomistic modeling
5. Clustering of ultra-low-energy implanted boron in silicon during postimplantation annealing
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