A general centroid determination methodology, with application to multilayer dielectric structures and thermally stimulated current measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354291
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1. Relation between currents and charges measured in samples during diagnostics of inhomogeneous insulating films;Semiconductors;2009-06
2. Oxide Traps, Border Traps, and Interface Traps in SiO2;Defects in Microelectronic Materials and Devices;2008-11-19
3. Thermally stimulated current in SiO2;Microelectronics Reliability;1999-09
4. Oxide, interface, and border traps in thermal, N2O, and N2O‐nitrided oxides;Journal of Applied Physics;1996-02
5. Injection spectroscopy of localized states in thin insulating layers on semiconductor surfaces;Progress in Surface Science;1994-12
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