Effect of temperature on data retention of silicon‐oxide‐nitride‐oxide‐semiconductor nonvolatile memory transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345062
Reference21 articles.
1. Hi-MNOS II technology for a 64-kbit byte-erasable 5-V-only EEPROM
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4. A Radiation Hardened Nonvolatile MNOS RAM
5. Ionizing Radiation Effects on the Sperry Rand Nonvolatile 256-Bit MNOS Ram Array (SR2256)
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