Investigating the origin of efficiency droop by profiling the voltage across the multi-quantum well of an operating light-emitting diode-Reference-Cited by-同舟云学术

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Investigating the origin of efficiency droop by profiling the voltage across the multi-quantum well of an operating light-emitting diode

Published:2016-06-06 Issue:23 Volume:108 Page:231101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Taewoong¹,Seong Tae-Yeon¹²,Kwon Ohmyoung³

Affiliation:

1. Department of Nano-Photonics Engineering, Korea University, Seoul 136-713, South Korea

2. School of Materials Science and Engineering, Korea University, Seoul 136-713, South Korea

3. School of Mechanical Engineering, Korea University, Seoul 136-713, South Korea

Funder

LG Innotek Co., Ltd

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4953401

Reference25 articles.

1. Solid-state lighting: an energy-economics perspective

2. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

3. Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting Diodes

4. Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs

5. Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

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1. Temperature dependence of the piezoelectric field in GaInN/GaN quantum wells and its impact on the device performance;Journal of Applied Physics;2024-08-15

2. InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes;Optics Letters;2022-02-25

3. Thermophysical Characterization of Efficiency Droop in GaN-Based Light-Emitting Diodes;Nanomaterials;2021-05-30

4. Band Structure, Band Offsets, and Intrinsic Defect Properties of Few-Layer Arsenic and Antimony;The Journal of Physical Chemistry C;2020-03-17

5. Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials;Journal of Semiconductors;2019-12-01

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