Suppression of the burn-in effect in InGaP/GaAs heterojunction bipolar transistors by constant period of voltage stress
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1640790
Reference12 articles.
1. Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor
2. Temperature dependences of current gains in GaInP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors
3. Near-ideal I-V characteristics of GaInP/GaAs heterojunction bipolar transistors
4. The presence of isolated hydrogen donors in heavily carbon-doped GaAs
5. Degradation mechanism in carbon-doped GaAs minority-carrier injection devices [HBTs]
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Burn-in effect in InGaP/GaAs HBT with intrinsically or extrinsically carbon doped base layer;Physica Scripta;2023-05-04
2. Role of Annealing in Constant Period of Voltage Stress on the Burn-in Effect Suppression of InGaP/GaAs Heterojunction Bipolar Transistors;Japanese Journal of Applied Physics;2007-03-08
3. Impact of bum-in effect and base strain on low frequency noise in InGaAsN HBTs;Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005.
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