Degradation mechanism in carbon-doped GaAs minority-carrier injection devices [HBTs]-Reference-Cited by-同舟云学术

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Degradation mechanism in carbon-doped GaAs minority-carrier injection devices [HBTs]

Published:1997 Issue:11 Volume:44 Page:1996-2001
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Fushimi H.,Wada K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx3/16/13894/00641371.pdf?arnumber=641371

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