Interplay between charging and roughness on two adjacent mask holes during plasma etching
Author:
Affiliation:
1. School of Electronic Information Engineering, Yangtze Normal University, Chongqing 408100, People's Republic of China
2. School of Robot Engineering, Yangtze Normal University, Chongqing 408100, People's Republic of China
Funder
Project of Science and Technology Research Program of Chongqing Education Commission of China
Start-up research funding of Yangtze Normal University
2017 Youth research talent supporting program
Publisher
AIP Publishing
Subject
Condensed Matter Physics
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0020592
Reference52 articles.
1. Influence of edge roughness in resist patterns on etched patterns
2. Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication
3. Deposition control for reduction of 193 nm photoresist degradation in dielectric etching
4. The interplay between surface charging and microscale roughness during plasma etching of polymeric substrates
5. Modeling of Charging on Unconventional Surface Morphologies of PMMA Substrates During Ar Plasma Etching
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. EFFECTS OF EDGE ROUGHNESS ON SURFACE CHARGING IN PLASMA ETCHING;Surface Review and Letters;2023-08-26
2. The modification of roughness to corner effect in plasma etching;Physica Scripta;2023-07-18
3. Study on the Pulse Phase Lag Effect on Two Mask Holes During Plasma Etching;Brazilian Journal of Physics;2021-06-09
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