Properties and etching rates of negative ions in inductively coupled plasmas and dc discharges produced in Ar/SF6
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3452357
Reference57 articles.
1. Developments of Plasma Etching Technology for Fabricating Semiconductor Devices
2. Reactive‐ion etching of GaAs and InP using CCl2F2/Ar/O2
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