Dry-etching techniques and chemistries for III–V semiconductors
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Reactive‐ion etching of GaAs and InP using CCl2F2/Ar/O2
2. Dry Etching for Microelectronics;Burton,1984
3. Carbon tetrachloride plasma etching of GaAs and InP: A kinetic study utilizing nonperturbative optical techniques
4. Surface Damage on GaAs Induced by Reactive Ion Etching and Sputter Etching
5. Plasma Etching—An Introduction;Flamm,1989
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