Reactive‐ion etching of GaAs and InP using CCl2F2/Ar/O2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91750
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1. High electronegativity multi-dipolar electron cyclotron resonance plasma source for etching by negative ions;Journal of Applied Physics;2012-04-15
2. Influence of Negative Ions on Drift Waves in a Low-Density Ar/O2-Plasma;Contributions to Plasma Physics;2011-04-19
3. Properties and etching rates of negative ions in inductively coupled plasmas and dc discharges produced in Ar/SF6;Journal of Applied Physics;2010-06-15
4. Fabrication of high-aspect-ratio, sub-micron gratings in AlGaInP/GaAs laser structures using a BCl3/Cl2/Ar inductively coupled plasma;Semiconductor Science and Technology;2007-08-06
5. ECR plasma etching of GaAs in CCl2F2/Ar/O2 discharge and IR studies of the etched surface;Current Applied Physics;2005-05
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