Surface restoration of oxygen‐implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332213
Reference29 articles.
1. TEM, AES and XPS Studies of Si Layer on Buried SiO2Layer Formed by High-Dose Oxygen Ion-Implantation
2. Formation of Abrupt Interfaces between Surface Silicon and Buried SiO2Layers by Very High Dose Oxygen-Ion Implantation
3. Infrared Absorption of Oxygen in Silicon
4. The solubility of oxygen in silicon
5. Infrared Absorption and Oxygen Content in Silicon and Germanium
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1. Infrared spectroscopy of Si–O bonding in low-dose low-energy separation by implanted oxygen materials;Thin Solid Films;2005-04
2. Positron implantation studies of oxygen in p+-silicon epilayers;Journal of Physics: Condensed Matter;1990-11-26
3. Oxygen incorporation in molecular‐beam epitaxial silicon doped using a boric oxide source;Journal of Applied Physics;1988-09
4. Monitoring of SIMOX layer properties and implantation temperature by optical measurements;Semiconductor Science and Technology;1987-10-01
5. Laterally Sealed LOCOS Isolation;Journal of The Electrochemical Society;1987-06-01
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