Positron implantation studies of oxygen in p+-silicon epilayers
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/2/i=47/a=010/pdf
Reference21 articles.
1. The study of sub-surface and interface characteristics of semiconductor heterostructures by slow positron implantation spectroscopy
2. Sputtering damage in Mo(111) studied with slow positrons and computer simulations
3. Oxygen in silicon: A positron annihilation investigation
4. Heat‐treatment‐induced defects in low‐resistivity silicon
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