Minority electron transport acrossp+doped submicron layers of GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350707
Reference15 articles.
1. Heterostructure bipolar transistors and integrated circuits
2. Electron drift velocity measurement in compositionally graded AlxGa1−xAs by time‐resolved optical picosecond reflectivity
3. Measurement of high electron drift velocity in a submicron, heavily doped graded gap AlxGa1−xAs layer
4. Bipolar transistor with graded band-gap base
5. High‐gain, high‐frequency AlGaAs/GaAs graded band‐gap base bipolar transistors with a Be diffusion setback layer in the base
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron transport in graded-band devices: Interplay of field, composition and length dependencies;Solid-State Electronics;1994-11
2. Regional Monte Carlo modeling of electron transport and transit-time estimation in graded-base HBT's;IEEE Transactions on Electron Devices;1994-04
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