Measurement of high electron drift velocity in a submicron, heavily doped graded gap AlxGa1−xAs layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94094
Reference16 articles.
1. Electron drift velocity measurement in compositionally graded AlxGa1−xAs by time‐resolved optical picosecond reflectivity
2. The operation of graded band gap base transistors at high currents
3. Transport of minority‐ carriers in graded‐composition semiconductors and its impact on graded‐band‐gap base transistors operated at high currents
4. New graded band‐gap picosecond phototransistor
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