Band alignment at epitaxial BaSnO3/SrTiO3(001) and BaSnO3/LaAlO3(001) heterojunctions-Reference-Cited by-同舟云学术

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Band alignment at epitaxial BaSnO3/SrTiO3(001) and BaSnO3/LaAlO3(001) heterojunctions

Published:2016-04-11 Issue:15 Volume:108 Page:152104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chambers Scott A.¹,Kaspar Tiffany C.¹,Prakash Abhinav²^ORCID,Haugstad Greg³,Jalan Bharat²^ORCID

Affiliation:

1. Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, USA

2. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA

3. Characterization Facility, University of Minnesota, Minneapolis, Minnesota 55455, USA

Funder

National Science Foundation (NSF)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4946762

Reference25 articles.

1. High Mobility in a Stable Transparent Perovskite Oxide

2. Improved electrical mobility in highly epitaxial La:BaSnO3 films on SmScO3(110) substrates

3. Structure and transport in high pressure oxygen sputter-deposited BaSnO3−δ

4. Direct Observation of Electrostatically Driven Band Gap Renormalization in a Degenerate Perovskite Transparent Conducting Oxide

5. High-mobility BaSnO3 grown by oxide molecular beam epitaxy

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