Improved electrical mobility in highly epitaxial La:BaSnO3 films on SmScO3(110) substrates-Reference-Cited by-同舟云学术

Improved electrical mobility in highly epitaxial La:BaSnO3 films on SmScO3(110) substrates

Published:2014-08-04 Issue:5 Volume:105 Page:052104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wadekar P. V.¹,Alaria J.²,O'Sullivan M.¹,Flack N. L. O.¹,Manning T. D.¹,Phillips L. J.²,Durose K.²,Lozano O.³,Lucas S.³,Claridge J. B.¹,Rosseinsky M. J.¹

Affiliation:

1. Department of Chemistry, University of Liverpool, Crown Street, Liverpool L69 7ZD, United Kingdom

2. Stephenson Institute for Renewable Energy and Department of Physics, University of Liverpool, Oxford Street, Liverpool L69 7ZE, United Kingdom

3. Research Centre for the Physics of Matter and Radiation, Namur Research Institute for Life Sciences, University of Namur, Namur 500, Belgium

Funder

European Research Council (ERC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4891816

Reference30 articles.

1. Evaporated Sn‐doped In2O3films: Basic optical properties and applications to energy‐efficient windows

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3. High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition

4. A transparent metal: Nb-doped anatase TiO2

5. Transparent conducting Sb-doped SnO2 thin films grown by pulsed-laser deposition

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