High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition-Reference-Cited by-同舟云学术

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High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition

Published:2003-06-02 Issue:22 Volume:82 Page:3901-3903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kaidashev E. M.,Lorenz M.,von Wenckstern H.,Rahm A.,Semmelhack H.-C.,Han K.-H.,Benndorf G.,Bundesmann C.,Hochmuth H.,Grundmann M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1578694

Reference17 articles.

1. Transparent Conducting Oxides

2. Stress and Defect Control in GaN Using Low Temperature Interlayers

3. Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)

4. Strain-related phenomena in GaN thin films

5. High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy

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