Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas
Author:
Affiliation:
1. Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Funder
Ministry of Education, Culture, Sports, Science, and Technology (MEXT)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/9/1.4930980.pdf?itemId=/content/aip/journal/adva/5/9/10.1063/1.4930980&mimeType=pdf&containerItemId=content/aip/journal/adva
Reference23 articles.
1. Fundamentals of Silicon Carbide Technology
2. Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties
3. Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing
4. Investigation of unusual mobile ion effects in thermally grown SiO2 on 4H-SiC(0001) at high temperatures
5. Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing
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3. Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma;Japanese Journal of Applied Physics;2024-06-03
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