Zone‐melting recrystallization of 3‐in.‐diam Si films on SiO2‐coated Si substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93456
Reference6 articles.
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2. Improved techniques for growth of large‐area single‐crystal Si sheets over SiO2using lateral epitaxy by seeded solidification
3. MOSFET's on Silicon prepared by moving melt zone recrystallization of encapsulated polycrystalline Silicon on an insulating substrate
4. Zone‐melting recrystallization of encapsulated silicon films on SiO2—morphology and crystallography
5. Subgrain boundaries in laterally seeded silicon‐on‐oxide formed by graphite strip heater recrystallization
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1. Electrical and piezoresistive properties of boron-implanted ZMR-SOI films;Sensors and Actuators A: Physical;1993-05
2. A Simple Method for Obtaining the Power Distribution Yielding a Desired Temperature Distribution in Zone-Melting Recrystallization;Japanese Journal of Applied Physics;1992-10-15
3. Electrical characteristics of aligned and transversally recrystallized SOI-MOS transistors;Solid-State Electronics;1992-10
4. Artificial Epitaxy (Graphoepitaxy);Oriented Crystallization on Amorphous Substrates;1991
5. Artificial epitaxy (graphoepitaxy) as an approach to the formation of SOI;Microelectronic Engineering;1988-12
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