Artificial epitaxy (graphoepitaxy) as an approach to the formation of SOI-Reference-Cited by-同舟云学术

Artificial epitaxy (graphoepitaxy) as an approach to the formation of SOI

Published:1988-12 Issue:3-4 Volume:8 Page:273-291
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Givargizov E.I.,Limanov A.B.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference66 articles.

1. Diataxy (graphoepitaxy) and other approaches to oriented crystallization on amorphous substrates;Givargizov,1982

2. Zone-melting recrystallization of encapsulated silicon films on SiO2—morphology and crystallography;Geis;Appl. Phys. Lett.,1982

3. Zone-melting recrystallization of 3-in.-diam. Si films on SiO2-coated Si substrates;Fan;Appl. Phys. Lett.,1982

4. Subgrain boundaries in laterally seeded silicon-on-oxide formed by graphite strip heater recrystallization;Pinizzotto;Appl. Phys. Lett.,1982

5. Strip-heater recrystallized SOI structures;Higuchi,1985

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1. Soi Materials;Silicon-on-Insulator Technology: Materials to VLSI;2004

2. Pattern formation during stationary heating and zone melting recrystallization of a silicon thin film;Metallurgical and Materials Transactions A;1999-03

3. Pattern formation during stationary heating and zone melting recrystallization of a silicon thin film;Metallurgical and Materials Transactions A;1999-03

4. Defect Engineering in SOI Films Prepared by Zone-Melting Recrystallization;Physical and Technical Problems of SOI Structures and Devices;1995

5. Heat ?superemission? and nucleation-front propagation under laser-induced crystallization of thin amorphous films;Applied Physics A Solids and Surfaces;1993-12