Thermodynamic model of low temperature metalorganic chemical vapor deposition of GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1457536
Reference36 articles.
1. High-power AlGaInN flip-chip light-emitting diodes
2. Resonant-cavity InGaN quantum-well blue light-emitting diodes
3. Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire
4. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
5. Occurrence of cubic GaN and strain relaxation in GaN buffer layers grown by low-pressure metalorganic vapor phase epitaxy on (0001) sapphire substrates
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1. Sublimation and Vapor Deposition;Fundamentals of Multiphase Heat Transfer and Flow;2019-09-13
2. Structural and optical properties of GaN thin films grown on Al2O3 substrates by MOCVD at different reactor pressures;Applied Surface Science;2011-11
3. GaN buffer layer growth by MOCVD using a thermodynamic non-equilibrium model;Vacuum;2010-05
4. SUBLIMATION AND VAPOR DEPOSITION;Transport Phenomena in Multiphase Systems;2006
5. Thermodynamic model of low-temperature molecular beam epitaxy of GaN with hydrazine;Journal of Applied Physics;2003-05
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