GaN buffer layer growth by MOCVD using a thermodynamic non-equilibrium model
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference11 articles.
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3. Effects of growth temperature on GaN nucleation layers;Yi;J Applied Physics Letters,1999
4. Thermodynamic model f low temperature metal organic chemical vapor deposition of GaN;Elyukhin;J Appl Phys,2002
5. Alternative microstructure of GaN nucleation layers grown by low pressure metal organic vapor phase epitaxy on sapphire substrate;Cheng;J Applied Physics Letters,1997
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2. Synthesis of GaN Nanoparticles by DC Plasma Enhanced Chemical Vapor Deposition;Advanced Materials Research;2013-11
3. Structural, optical and dispersion characteristics of nanocrystalline GaN films prepared by MOVPE;Optics & Laser Technology;2012-03
4. Structural and optical properties of GaN thin films grown on Al2O3 substrates by MOCVD at different reactor pressures;Applied Surface Science;2011-11
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