Temperature-dependent characteristics for the p-type CuO gate HEMT and high-k HfO2 MIS-HEMT on the Si substrates
Author:
Affiliation:
1. Key Lab of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071, China
2. School of Microelectronics, Xidian University, Xi’an 710071, China
Funder
National Natural Science Foundation of China
China Postdoctoral Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0064695
Reference24 articles.
1. Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor
2. Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors
3. Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance
4. Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors
5. GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz
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1. Modeling of Enhancement Mode HEMT with Π-Gate Optimization for High Power Applications;International Journal of High Speed Electronics and Systems;2023-07-20
2. Investigation of high-performance Schottky diodes on a Ga2O3 epilayer using Cu with high barrier height, high temperature stability and repeatability;Journal of Physics D: Applied Physics;2023-07-12
3. Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation;AIP Advances;2023-04-01
4. Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering;Materials Science in Semiconductor Processing;2023-02
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