Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μm epitaxial layers
Author:
Affiliation:
1. Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA
Funder
DOE NEUP
ASPIRE-I
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0049218
Reference63 articles.
1. Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts
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5. Maskless random antireflective nanotexturing of single crystal SiC
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