Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μm epitaxial layers-Reference-Cited by-同舟云学术

Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μm epitaxial layers

Published:2021-06-28 Issue:24 Volume:129 Page:244501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kleppinger Joshua W.¹,Chaudhuri Sandeep K.¹^ORCID,Karadavut OmerFaruk¹,Mandal Krishna C.¹^ORCID

Affiliation:

1. Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA

Funder

DOE NEUP

ASPIRE-I

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0049218

Reference63 articles.

1. Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts

2. Electrical and noise properties of proton irradiated 4H-SiC Schottky diodes

3. Silicon carbide detector for laser-generated plasma radiation

4. Photoelectrochemical etching to fabricate single-crystal SiC MEMS for harsh environments

5. Maskless random antireflective nanotexturing of single crystal SiC

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