Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001)-Reference-Cited by-同舟云学术

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Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001)

Published:2011-08-15 Issue:4 Volume:110 Page:044310
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Boioli F.,Zinovyev V. A.,Gatti R.,Marzegalli A.,Montalenti F.,Stoffel M.,Merdzhanova T.,Wang L.,Pezzoli F.,Rastelli A.,Schmidt O. G.,Miglio Leo

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3611385

Reference27 articles.

1. Stresses and first-order dislocation energetics in equilibrium Stranski-Krastanow islands

2. Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands

3. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes

4. Local equilibrium and global relaxation of strainedSiGe∕Si(001)layers

5. Critical Shape and Size for Dislocation Nucleation inSi1−xGexIslands on Si(001)

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Machine learning potential for interacting dislocations in the presence of free surfaces;Scientific Reports;2022-03-08

2. Temperature evolution of defects and atomic ordering in Si1−xGex islands on Si(001);Journal of Applied Physics;2016-02-28

3. Interpolating function of the strain relief of epitaxial quantum dots via an alternative morphological descriptor;Physical Review B;2015-05-26

4. Evolution and coarsening of Si-rich SiGe islands epitaxially grown at high temperatures on Si(001);Microelectronic Engineering;2014-08

5. In situ x-ray study of the formation of defects in Ge islands on Si(001);Applied Physics Letters;2011-10-17

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