UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio

UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio > 107

Published:2017-12-18 Issue:25 Volume:111 Page:251103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

kumar Sandeep¹^ORCID,Pratiyush Anamika Singh¹,Dolmanan Surani B.²,Tripathy Sudhiranjan²,Muralidharan Rangarajan¹,Nath Digbijoy N.¹

Affiliation:

1. Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science (IISc), Bangalore 560012, India

2. Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology, and Research (A*STAR), Innovis 08-03, 2 Fusionopolisway, Singapore 138634

Funder

Department of Science and Technology, Ministry of Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5004024

Reference21 articles.

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5. High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

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