Temperature effect on impact ionization characteristics in metamorphic high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2410233
Reference8 articles.
1. High-temperature thermal stability performance in /spl delta/-doped In/sub 0.425/Al/sub 0.575/As--In/sub 0.65/Ga/sub 0.35/As metamorphic HEMT
2. Gate-metal formation-related kink effect and gate current on In0.5Al0.5As∕In0.5Ga0.5As metamorphic high electron mobility transistor performance
3. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 44.
4. Impact ionization in InAlAs/InGaAs/InAlAs HEMT's
5. Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)
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4. Effects of Selective and Nonselective Wet Gate Recess on InAlAs∕InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels;Journal of The Electrochemical Society;2011
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